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Related Concept Videos

P-N junction01:11

P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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InSe Nanosheet/Ultrathin Si Heterojunction for Filterless, Self-Powered Ultraviolet Photodetection.

Wei Shu1, Zi-Hao Guo1, Zhi-Yong Deng1

  • 1School of Microelectronics, Hefei University of Technology, Hefei 230009, China.

The Journal of Physical Chemistry Letters
|December 30, 2025
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Researchers developed an InSe nanosheet/ultrathin silicon heterojunction for filterless ultraviolet (UV) photodetection. This device offers improved performance and potential for anti-interference UV communication systems.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Ultrathin silicon shows promise for filterless ultraviolet (UV) photodetection due to its wavelength-dependent coefficient.
  • High defect density in ultrathin silicon leads to severe surface recombination, degrading UV photodetection performance.

Purpose of the Study:

  • To fabricate an InSe nanosheet/ultrathin silicon heterojunction for enhanced UV photodetection.
  • To investigate the potential of this heterojunction for self-powered, filterless UV detection and anti-interference UV communication.

Main Methods:

  • Fabrication of an InSe nanosheet/ultrathin silicon heterojunction.
  • Characterization of the heterojunction's performance under 365 nm illumination.
  • Evaluation of responsivity, external quantum efficiency (EQE), and response speed.

Main Results:

  • The heterojunction exhibits a built-in electric field that enhances photocarrier separation and collection efficiency.
  • Achieved a peak responsivity of 0.25 A W-1 and an EQE of 85.6%.
  • Demonstrated fast response times (150/195 μs rise/fall) and self-powered operation.

Conclusions:

  • The InSe/ultrathin Si heterojunction is a promising self-powered, filterless UV photodetector.
  • The device shows potential for anti-interference UV communication applications.
  • This work presents a viable strategy for developing portable UV optical communication systems.