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Updated: Jan 7, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Tailorable Polarity Switching and Optoelectronic Transition in a Gate-Source Integrated 2D Ferroelectric

Lu Qi1, Ming Chen2, Xiaoliang Weng2

  • 1Shenzhen Key Laboratory of Ultraintense Laser and Advanced Material Technology, Center For Intense Laser Application Technology, and College of Engineering Physics, and Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|December 30, 2025
PubMed
Summary

This study introduces a novel 2D ferroelectric phototransistor that switches carrier types and enhances optoelectronic performance using only channel voltage. It achieves positive/negative photoconduction switching and optoelectronic transitions at low voltages.

Keywords:
2D ferroelectrics2D phototransitorsion migrationnegative photoconductionoptoelectronic transition

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