Related Experiment Video
Updated: Jan 7, 2026

Synthesis of Non-uniformly Pr-doped SrTiO3 Ceramics and Their Thermoelectric Properties
Published on: August 15, 2015
Influence of the Nd3+ Dopant Content in Bi3TeBO9 Powders on Their Optical Nonlinearity
Maciej Chrunik1, Alexej Bubnov2, Roman Minikayev3
1Institute of Applied Physics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland.
Abstract:
Second harmonic generation measurements for neodymium-doped bismuth-tellurium borate (Bi3TeBO9:Nd3+) powders are shown for the first time. Using undoped and low-content Nd3+-doped samples associated with the strongest nonlinear optical response, studies of temperature-dependent second-harmonic generation near the absorption edge were conducted. Spectroscopic measurements of the investigated powders revealed characteristic Nd3+ absorption bands and helped to estimate the corresponding energy band gaps for the chosen samples. The influence of low Nd3+-content on the absorption edge shift, as well as on the enhancement of second-harmonic generation and its temperature attenuation, is discussed. Temperature-dependent X-ray diffraction measurements enabled researchers to calculate the thermal expansion coefficients for undoped and Nd3+-doped Bi3TeBO9 and to assess the impact of this phenomenon on its acentricity. Thermogravimetric studies demonstrated the absence of phase transitions for the chosen samples up to their incongruent melting points. Energy Dispersive X-ray Spectroscopy measurements verified the uniformity of Nd3+ distribution in doped Bi3TeBO9 powders. The suitability of polycrystalline Bi3TeBO9:Nd3+ as media for the self-frequency doubling devices for potential optoelectronic and biomedical applications was assessed. The finest fractions of deagglomerated and suspended powders were extracted and demonstrated near-nanostructural morphology of separated particles, as revealed by means of atomic force microscopy.
More Related Videos
08:00Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
Published on: March 27, 2018
13:56Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Related Concept Videos
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Nuclear Overhauser Enhancement (NOE)
Diode: Reverse bias
Types of Semiconductors
Modeling of Diode Forward Characteristics
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...