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Study on Stress Distribution and Its Impact on Reliability of SiO2-Based Inorganic Chiplet Gap Filling
Ziyang Ding1, Shaowei Liu1, Chen Lin2
1School of Integrated Circuits, Southeast University, Wuxi 214000, China.
Inorganic gap filling with silicon dioxide improves chiplet integration reliability. This study quantifies its mechanical properties and models thermomechanical stress, addressing cracking risks in 2.5D and 3D packaging.
Area of Science:
- Materials Science
- Mechanical Engineering
- Semiconductor Manufacturing
Background:
- Inorganic gap filling using silicon dioxide (SiO2) via plasma-enhanced chemical vapor deposition (PECVD) is crucial for 2.5D and 3D chiplet integration, offering an alternative to Epoxy Mold Compound (EMC).
- SiO2 fillers present reliability challenges, including cracking and peeling, due to their inorganic nature.
- Quantitative characterization and modeling of microscale mechanical properties, thermal stress, and fracture risk in SiO2 fillers are lacking.
Purpose of the Study:
- To develop a comprehensive route for quantitative characterization of the mechanical behavior of inorganic gap fillers.
- To establish a finite element method (FEM) model for predicting the thermomechanical reliability of the gap filling process.
- To investigate the impact of filler thickness on stress distribution and fracture risk.
Main Methods:
- Combined nanoindentation and three-point bending tests for microscale mechanical characterization.
- Finite Element Method (FEM) modeling to simulate thermomechanical stress and predict fracture risk.
- Raman spectroscopy for experimental validation of the FEM model.
Main Results:
- A novel method for quantitative microscale mechanical characterization of SiO2 fillers was established.
- An FEM model was developed and validated using Raman spectroscopy, demonstrating reliable predictive ability for thermomechanical reliability.
- The study revealed the significant impact of filler thickness on stress distribution within the gap-filled structures.
Conclusions:
- The developed microscale characterization and FEM modeling approach overcomes limitations of traditional methods for inorganic gap filling in advanced packaging.
- This research provides crucial support for process optimization and structural design in high-density 2.5D/3D chiplet integration.
- The findings enhance the understanding of inorganic filling process reliability, crucial for the advancement of heterogeneous integration technologies.
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