Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Equivalent Capacitance

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...

Equivalent Capacitance

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...

Mesh Analysis for AC Circuits

Mesh Analysis for AC Circuits

In the domain of radio communication, the significance of impedance matching must be considered. It is crucial to ensure the efficient transmission of signals between radio transmitters and receivers. Achieving this balance involves using impedance-matching circuits, with one fundamental configuration comprising a resistor, capacitor, and inductor.
The process of harmonizing these impedances begins with a clear understanding of the input and output signals. Once these signals are known, the...

Linear Approximation in Frequency Domain

Linear Approximation in Frequency Domain

Linear systems are characterized by two main properties: superposition and homogeneity. Superposition allows the response to multiple inputs to be the sum of the responses to each individual input. Homogeneity ensures that scaling an input by a scalar results in the response being scaled by the same scalar.
In contrast, nonlinear systems do not inherently possess these properties. However, for small deviations around an operating point, a nonlinear system can often be approximated as linear....

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

A multimodal MRI-radiomics deep learning model for survival risk stratification after gamma knife radiosurgery in patients with brain metastases: A multicenter retrospective study.

Radiotherapy and oncology : journal of the European Society for Therapeutic Radiology and Oncology·2026

Same author

Correlation and regression analysis of the <i>KRT27</i> and <i>ELOVL4</i> genes in cashmere fineness and other production performances in Liaoning cashmere goats.

Archives animal breeding·2026

Same author

Effect of Night Sleep Duration on Chronic Lung Disease in Middle-Aged and Older Adults: A 9-Year Follow-up Analysis From the China Health and Retirement Longitudinal Study.

Journal of sleep research·2026

Same author

Association study on the regulation of muscle development-related genes, proteins, and metabolites in different tissues by gastrointestinal flora during various developmental stages of Liaoning cashmere goats.

Food chemistry·2026

Same author

Multimodal modeling based on DNA methylation analysis in bronchoalveolar lavage fluid for early lung cancer detection.

Scientific reports·2026

Same author

Sex-specific effects of <i>guanosine monophosphate synthase</i> and <i>steroid receptor coactivator</i> gene polymorphisms on cashmere fineness and production traits in Liaoning Cashmere goats.

Veterinary world·2026

Search research articles

Related Experiment Video

Updated: Jan 7, 2026

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model.

Yuchen Miao^1,2, Qingyu Yuan³, Chuangye Wang^1,2

¹School of Electronic Engineering, Jiangsu Ocean University, Lianyungang 222005, China.

|December 31, 2025

Summary

This study introduces an improved nonlinear capacitance model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). The enhanced model accurately characterizes intrinsic capacitance, outperforming the traditional Angelov model in experimental validation.

Keywords:

Angelov mod intrinsic capacitance nonlinear capacitance parameter extraction small-signal equivalent circuit

More Related Videos

Dynamic Clamp Methods to Investigate Impaired Neuronal Excitability Associated with Autism

Dynamic Clamp Methods to Investigate Impaired Neuronal Excitability Associated with Autism

Published on: October 17, 2025

Finite Element Modelling of a Cellular Electric Microenvironment

Finite Element Modelling of a Cellular Electric Microenvironment

Published on: May 18, 2021

Related Experiment Videos

Last Updated: Jan 7, 2026

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Dynamic Clamp Methods to Investigate Impaired Neuronal Excitability Associated with Autism

Dynamic Clamp Methods to Investigate Impaired Neuronal Excitability Associated with Autism

Published on: October 17, 2025

Finite Element Modelling of a Cellular Electric Microenvironment

Finite Element Modelling of a Cellular Electric Microenvironment

Published on: May 18, 2021

Area of Science:

Semiconductor device physics
Materials science

Background:

Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) are crucial for high-frequency applications.
Accurate modeling of intrinsic capacitance is essential for circuit design.
The traditional Angelov model provides a basis but requires refinement for GaN HEMTs.

Purpose of the Study:

To develop and validate an improved nonlinear capacitance model for GaN HEMTs.
To enhance the quantitative characterization of intrinsic capacitance in GaN HEMTs.
To support accurate device modeling for high-frequency circuit design.

Main Methods:

Fabrication of GaN HEMTs using the UMS GH15-10 process.
Extraction of intrinsic capacitance parameters from experimental data.
Comparison of the traditional Angelov model with a proposed improved model using R² and RMSE metrics.

Main Results:

The improved nonlinear capacitance model demonstrated a significantly higher agreement with experimental data.
The enhanced model showed superior performance compared to the traditional Angelov model.
Quantitative characterization of GaN HEMT nonlinear capacitance was achieved with greater accuracy.

Conclusions:

The proposed improved model is more suitable for accurately modeling the nonlinear intrinsic capacitance of GaN HEMTs.
This research facilitates more precise device modeling for high-frequency circuit applications.
The validated model aids in the design and optimization of GaN HEMT-based circuits.