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An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model
Yuchen Miao1,2, Qingyu Yuan3, Chuangye Wang1,2
1School of Electronic Engineering, Jiangsu Ocean University, Lianyungang 222005, China.
Micromachines
|December 31, 2025
Summary
This study introduces an improved nonlinear capacitance model for Gallium Nitride High Electron Mobility Transistors (GaN HEMTs). The enhanced model accurately characterizes intrinsic capacitance, outperforming the traditional Angelov model in experimental validation.
Area of Science:
- Semiconductor device physics
- Materials science
Background:
- Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) are crucial for high-frequency applications.
- Accurate modeling of intrinsic capacitance is essential for circuit design.
- The traditional Angelov model provides a basis but requires refinement for GaN HEMTs.
Purpose of the Study:
- To develop and validate an improved nonlinear capacitance model for GaN HEMTs.
- To enhance the quantitative characterization of intrinsic capacitance in GaN HEMTs.
- To support accurate device modeling for high-frequency circuit design.
Main Methods:
- Fabrication of GaN HEMTs using the UMS GH15-10 process.
- Extraction of intrinsic capacitance parameters from experimental data.
- Comparison of the traditional Angelov model with a proposed improved model using R² and RMSE metrics.
Main Results:
- The improved nonlinear capacitance model demonstrated a significantly higher agreement with experimental data.
- The enhanced model showed superior performance compared to the traditional Angelov model.
- Quantitative characterization of GaN HEMT nonlinear capacitance was achieved with greater accuracy.
Conclusions:
- The proposed improved model is more suitable for accurately modeling the nonlinear intrinsic capacitance of GaN HEMTs.
- This research facilitates more precise device modeling for high-frequency circuit applications.
- The validated model aids in the design and optimization of GaN HEMT-based circuits.
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