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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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In2O3: An Oxide Semiconductor for Thin-Film Transistors, a Short Review.

Christophe Avis1, Jin Jang1

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Molecules (Basel, Switzerland)
|December 31, 2025
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Summary

Polycrystalline Indium Oxide (In2O3) thin-film transistors (TFTs) offer high mobility exceeding 100 cm²/Vs, enabling scaled devices for advanced electronics. This review explores In2O3 material properties, TFT characteristics, and integration for neuromorphic and 3D applications.

Keywords:
3D integrationALDIGOITOIn2O3dopingneuromorphic applicationsspray-pyrolysisthin-film transistors

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Semiconductor Physics

Background:

  • Amorphous oxide semiconductors revolutionized electronics, with Indium Gallium Zinc Oxide (IGZO) achieving mobilities of ~10 cm²/Vs on flexible substrates.
  • Achieving mobilities over 30 cm²/Vs proved challenging for IGZO, prompting research into alternative materials.
  • Polycrystalline Indium Oxide (In2O3) has emerged as a promising material, demonstrating significantly higher mobilities.

Purpose of the Study:

  • To provide a comprehensive review of polycrystalline In2O3 material properties and their impact on thin-film transistors (TFTs).
  • To detail the characteristics, fabrication processes, and device engineering strategies for In2O3 TFTs.
  • To highlight recent breakthroughs and potential applications of In2O3 TFTs in neuromorphic computing and 3D integration.

Main Methods:

  • Review of material properties including bandgap, charge neutrality level (CNL), doping effects, optical properties, effective mass, and mobility.
  • Analysis of TFT parameters such as field-effect mobility, subthreshold swing, and stability under various stress conditions (BTS, NBIS).
  • Exploration of fabrication techniques (vacuum and non-vacuum) and device engineering approaches (passivation, gate insulators, dual gates, 2 DEG).

Main Results:

  • In2O3 TFTs achieve high mobilities exceeding 100 cm²/Vs, suitable for scaled devices down to 10 nm channel lengths.
  • Doping with elements like Zr, Ge, Mo, Ti, Sn, or H influences carrier concentration and mobility.
  • Advanced device engineering and doping strategies, including hydrogen and lanthanides, further enhance performance and stability.

Conclusions:

  • Polycrystalline In2O3 is a superior alternative to IGZO for high-performance TFTs, offering exceptional mobility and scalability.
  • In2O3 TFTs are well-suited for demanding applications like back-end-of-the-line (BEOL) integration, neuromorphic systems, and 3D circuits.
  • Continued research into material optimization and device engineering promises further advancements in In2O3-based electronics.