Related Experiment Video
Updated: Jan 7, 2026

Author Spotlight: Advancing Energy Solutions Using Nanocomposites as Processed Thermoelectric Materials
Published on: May 17, 2024
Heterojunction Mediated Interfacial Selenium Vacancy Facilitating Spontaneous N═O Bonds Breakage Toward Efficient
Tong Liu1, Pengtao Xu1,2, Changlu Zhao3
1College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou, Zhejiang, 310014, China.
None:
The electrocatalytic nitrates reduction reaction driven by green electricity provides a feasible pathway for simultaneously achieving the elimination of nitrates pollutants and production of valuable ammonia. However, the electrocatalytic efficiency is limited by the low ammonia yield rate and Faradaic efficiency. Vacancy engineering is an efficient strategy for improving the performance of catalysts. Here, we develop an efficient strategy of heterojunction (Ni3Se4/CoSe2) mediated interfacial selenium vacancy toward efficient ammonia electrosynthesis. In situ characterizations combined with theoretical calculations reveal that the interfacial selenium vacancy on CoSe2 segment strengthens the adsorption of nitrates, spontaneously breaks the N═O bonds of nitrates, thereby accelerating the overall NO3RR. The Ni3Se4/CoSe2 heterojunction nanosheets array achieves an ammonia yield of 1.44 mmol cm-2 h-1 and Faradaic efficiency of 94.8% at a current density of 350 mA cm-2. Furthermore, the Ni3Se4/CoSe2 heterojunction electrode was assembled into a zinc-nitrate battery as the cathode, delivering an open-circuit voltage of 1.46 V, a maximum power density of 12.71 mW cm-2, and a charge-discharge stability of over 168 h.
More Related Videos
08:12Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
11:47The Effect of Interfacial Chemical Bonding in TiO2-SiO2 Composites on Their Photocatalytic NOx Abatement Performance
Published on: July 4, 2017
Related Concept Videos
P-N junction
Catalysis
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Free Energy Changes for Nonstandard States
Electrophilic Aromatic Substitution: Nitration of Benzene
Thermal and Photochemical Electrocyclic Reactions: Overview