Buried Interface Engineering via Homogenized Two-Dimensional Phase Enables High-Mobility Tin Perovskite Photosynaptic...

Area of Science:

• Materials Science
• Nanotechnology
• Electronics

Background:

• Tin halide perovskites (THPs) offer high carrier mobility and absorption for photosynaptic transistors.
• Uncontrolled crystallization in THPs leads to phase inhomogeneity and defects, degrading device performance.

Purpose of the Study:

• To improve the interfacial quality and device performance of THP-based photosynaptic transistors.
• To achieve enhanced homogeneity and crystallographic orientation in THP films.

Main Methods:

• Manipulating interfacial hydrogen bonding using urea modification on SiO2 substrates.
• Investigating the effects of urea modification on THP crystallization kinetics and film properties.
• Fabricating and characterizing photosynaptic transistors based on modified THP films.

Main Results:

• Achieved enhanced homogeneity of the 2D perovskite phase and improved crystallographic orientation.
• Suppressed defect formation (e.g., Sn4+) at the buried interface, leading to a 5-fold increase in field-effect mobility.
• Demonstrated synaptic behaviors including plasticity, paired-pulse facilitation, and learning-forgetting-relearning cycles under visible to NIR light illumination.

Conclusions:

• Urea modification is an effective strategy for tailoring THP crystallization for high-performance transistors.
• The developed THP transistors show promise for neuromorphic computing applications.
• This work provides insights into controlling perovskite crystallization for advanced electronic devices.