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Phase Synergy Enables Low-Power Ferroelectric Switching in HfO2 Epitaxial Films.

Kefan Wang1, Liyang Ma2, Lijun Wu3

  • 1School of Advanced Materials Innovation, Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China.

Advanced Materials (Deerfield Beach, Fla.)
|January 2, 2026
PubMed
Summary

Harnessing the tetragonal phase in hafnium oxide (HfO2) ferroelectric films enhances performance. This phase-boundary engineering strategy boosts ferroelectricity, paving the way for advanced nanoelectronic devices.

Keywords:
Epitaxial filmsFerroelectric switchingHafnium oxidePhase synergy

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Hafnium oxide (HfO2)-based ferroelectric materials are key for next-generation non-volatile memory due to their nanoscale ferroelectricity and CMOS compatibility.
  • Current research often focuses on suppressing non-ferroelectric phases, potentially missing synergistic benefits.
  • The role of the tetragonal (T) phase in HfO2 ferroelectrics remains debated.

Purpose of the Study:

  • To clarify the beneficial role of the tetragonal (T) phase in HfO2 ferroelectric materials.
  • To introduce and validate a phase-boundary engineering strategy using the T-phase.
  • To enhance ferroelectric properties in HfO2 films by controlling phase coexistence.

Main Methods:

  • Epitaxial growth of La-doped HfO2 films with controlled phase boundaries.
  • Stabilization of coherent boundaries between ferroelectric orthorhombic (O) and tetragonal (T) phases.
  • Characterization using atomic-scale electron microscopy.
  • Analysis using deep-learning enhanced molecular dynamics simulations.

Main Results:

  • Achieved significant improvements in ferroelectric properties by stabilizing O-T phase boundaries.
  • Doubled remanent polarization (Pr ~ 30 µC/cm²) and reduced coercive field (Ec ~ 3 MV/cm) by 30%.
  • Atomic-scale imaging confirmed the structure of coherent O-T boundaries.
  • Simulations revealed that boundaries lower the energy barrier by facilitating intermediate polarization states.

Conclusions:

  • The tetragonal phase and phase coexistence can be beneficial for HfO2 ferroelectrics.
  • Phase-boundary engineering offers a tunable approach to enhance ferroelectricity.
  • This strategy enables the development of ultra-low-power HfO2-based nanoelectronics.