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Related Experiment Video

Updated: Jan 7, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Published on: August 2, 2019

Magnetotransport and Coulomb Blockade in Single InAs Colloidal Quantum Dot Transistors.

Kenji Shibata¹, Tomoki Takiguchi¹, Akira Sato¹

¹Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumi-cho, Taihaku-ku, Sendai 982-8577, Japan.

|January 5, 2026

Summary

Researchers studied electron transport in single Indium Arsenide (InAs) quantum dots. They measured key electronic properties and demonstrated room-temperature single-electron transistors, paving the way for advanced electronic and quantum devices.

Keywords:

Indium Arsenide (InAs)Zeeman splitting bandgap charging energy colloidal quantum dots (CQDs)diamagnetic shift single-electron transistor (SET)

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Published on: June 3, 2015

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Controlling carrier transport in colloidal quantum dots (CQDs) is vital for electronic devices.
Characterizing transport in CQDs is difficult due to variations in size and morphology.

Purpose of the Study:

Investigate carrier transport through individual oleic acid-capped Indium Arsenide (InAs) CQDs.
Characterize intrinsic electronic properties of InAs CQDs, including size-dependent charging and bandgap energies.
Explore spin-dependent electron transport and magnetic-field control of quantum states.

Main Methods:

Fabrication of nanogap metal electrodes coupled to single InAs CQDs.
Measurement of single-electron tunneling through individual CQDs.
Analysis of diamagnetic shift and Zeeman splitting under magnetic fields.

Main Results:

Determined dot size-dependent charging energy and bandgap energy of InAs CQDs.
Observed spin-dependent electron transport and characterized intrinsic electronic properties.
Demonstrated room-temperature operation of single-electron transistors based on InAs CQDs.

Conclusions:

InAs CQDs exhibit controllable electronic and spin properties suitable for advanced applications.
Magnetic-field control of orbital and spin states highlights potential for spintronics and quantum information devices.
This work provides fundamental insights into carrier transport in CQDs for future device development.