Related Experiment Video
Updated: Jan 7, 2026

Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
Published on: June 7, 2019
Dual-Functional Programmable Metasurface with Zero Static Power Based on Liquid Metal
Qingdong Cai1, Xiaojian Fu1, Peng Wang1
1State Key Laboratory of Millimeter Waves, Southeast University, Nanjing, China.
Abstract:
The switching devices based on metasurfaces suffer from high power consumption, metal fatigue, and unforeseen crosstalk. To address these challenges, liquid metal has been explored as a novel approach to reconfigure passive metasurfaces with zero static power. The integration of liquid metal, a grating-structured microfluidic chip, and a passive metasurface enables to achieve programmable reflection and transmission characteristics, rendering a dual-functional programmable metasurface (DFPM). Specifically, DFPM can realize the programmable reflection phases by tuning the passive metasurface with liquid metal. In addition, upon being decoupled from the passive metasurface, the microfluidic chip transforms into an independent liquid metal metasurface that exhibits programmable transmission resonant frequencies, a feature that holds promising applications in magnetic resonance imaging (MRI). The microfluidic chip employs a grating structure to achieve individual control over each unit, significantly reducing the complexity and cost of fabrication and control. Moreover, when applied in MRI, this grating structured microfluidic metasurface offers exceptionally uniform magnetic field enhancement capability and a broad frequency tuning range. Significantly, the flexible microfluidic substrate and liquid metal enhance the conformal adaptability of the metasurface, positioning it as a promising candidate for wearable devices and flexible electronics.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

