Artificial Refractory Neuron Based on Cs2AgBiBr6 Nanoionic Memristor for Efficient Motion Information Processing

Xuerong Liu1,2,3, Mengjie Shao1, Xiaojian Zhu1,2,3

  • 1Zhejiang Key Laboratory of Magnetic Materials and Applications, Ningbo Institute of Materials Technology & Engineering, CAS, Ningbo, China.

Abstract