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Characterization of Surface Modifications by White Light Interferometry: Applications in Ion Sputtering, Laser Ablation, and Tribology Experiments

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Ultrafast Laser-Induced Defects in β-Gallium Oxide Below Ablation Threshold.

Emma DeAngelis¹, Christopher Chae¹, Sadikul Alam¹

¹Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, United States.

ACS Applied Materials & Interfaces

|January 5, 2026

Summary

This summary is machine-generated.

Ultrafast laser pulses create subsurface defects in gallium oxide, forming amorphous layers and phase changes. These findings advance understanding of defect formation and precision material modification.

Keywords:

gallium oxide laser damage metastable phase phase transformation point defects surface potential ultrafast lasers γ-Ga2O3

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Area of Science:

Materials Science
Solid State Physics
Nanotechnology

Background:

Gallium oxide (Ga2O3) is a wide bandgap semiconductor with significant electronic and optical properties.
Understanding laser-induced defects is crucial for controlled nanomaterial transformation.
Defect formation mechanisms in Ga2O3 under ultrafast laser irradiation require detailed investigation.

Purpose of the Study:

To investigate ultrafast laser-induced morphological and crystalline defects in (2̅01)β-Ga2O3.
To explore the depth-dependent modification of Ga2O3.
To understand the potential of ultrashort laser pulses for precision subsurface modification.

Main Methods:

Irradiation of (2̅01)β-Ga2O3 with 95 fs, 1030 nm laser pulses.
Kelvin probe force microscopy and depth-resolved cathodoluminescence spectroscopy (DRCLS).
Scanning transmission electron microscopy (STEM) and FDTD simulations.

Main Results:

Laser-induced subsurface crystallographic defects were detected below the ablation threshold.
A depth-dependent modification was observed: amorphous layer, γ-Ga2O3 phase change, and point defect region.
DRCLS probed depths of 58-180 nm, complemented by STEM for surface and near-surface analysis.
FDTD simulations showed high carrier generation density consistent with experimental observations.

Conclusions:

Ultrafast laser irradiation induces complex, depth-dependent defect structures in β-Ga2O3.
These defects include amorphous layers, phase transformations, and point defect variations.
The study highlights the potential of ultrashort laser pulses for precise subsurface engineering in wide bandgap semiconductors.