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Islands Size-Controlled Phase Transition in MBE-Grown Two-Dimensional NbSe2
Liwei Liu1, Xinyu Huang1,2, Zeping Huang1,3
1School of Integrated Circuits and Electronics, MIIT Key Laboratory For Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.
Small (Weinheim an Der Bergstrasse, Germany)
|January 5, 2026
Summary
Controlling island size during molecular beam epitaxy (MBE) growth enables phase transitions in single-layer Niobium Diselenide (NbSe2). This size-effect mechanism facilitates the formation of large, 2H-phase NbSe2 islands, crucial for electronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Single-layer Niobium Diselenide (NbSe2) exhibits unique phase-dependent electronic properties.
- Controlling the crystalline phase (1T vs. 2H) is essential for its applications.
- Existing methods for phase control in NbSe2, like substrate temperature in MBE, have limitations.
Purpose of the Study:
- To investigate alternative methods for phase control in single-layer NbSe2.
- To understand the underlying mechanism of phase transitions.
- To achieve large, phase-pure 2H-phase NbSe2 islands.
Main Methods:
- Utilized molecular beam epitaxy (MBE) for NbSe2 growth.
- Controlled the island size during MBE growth as a key parameter.
- Employed scanning tunneling spectroscopy (STS) to analyze island morphology and phase.
- Performed statistical analysis and theoretical calculations to elucidate the mechanism.
Main Results:
- Demonstrated phase transition from 1T to 2H phase by controlling island size.
- Observed distinct growth stages: 1T nucleation, coalescence with transition, and 2H formation.
- Identified edge energy-controlled size effect as the mechanism for phase transition.
- Successfully produced large, compact 2H-phase NbSe2 islands.
Conclusions:
- Island size control in MBE offers a viable route for phase engineering in single-layer NbSe2.
- The size-effect mechanism provides fundamental insights into phase transitions in 2D materials.
- This approach can potentially be extended to other transition metal dichalcogenides (TMDs).

