Islands Size-Controlled Phase Transition in MBE-Grown Two-Dimensional NbSe2

Liwei Liu1, Xinyu Huang1,2, Zeping Huang1,3

  • 1School of Integrated Circuits and Electronics, MIIT Key Laboratory For Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, China.

Summary

Controlling island size during molecular beam epitaxy (MBE) growth enables phase transitions in single-layer Niobium Diselenide (NbSe2). This size-effect mechanism facilitates the formation of large, 2H-phase NbSe2 islands, crucial for electronic applications.