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Facilely Scalable Copper Telluride Photodetectors with On-Chip Spectral Selectivity Enabled by Laser-Direct-Written
Fenghua Liu1,2, Fulong Yao1, Lin Li1
1Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
Abstract:
Broadband ultraviolet-to-visible photodetection is of great importance for next-generation optoelectronic applications, yet the scalable integration of emerging high-performance materials with on-chip spectral-selectivity control remains a challenge. Here, we report a facile and scalable strategy for fabricating large-area copper telluride photodetectors, an underexplored transition-metal telluride, through vacuum thermal evaporation, followed by chemical vapor tellurization. The devices exhibit an outstanding broadband photoresponse across the UV-visible range, delivering responsivities of 210 mA/W at 365 nm and 200 mA/W at 465 nm. Optoelectronic characterizations confirm p-type conductivity and pronounced photogating effects, supported by a direct bandgap of 2.6 eV. Moreover, by integrating femtosecond laser-direct-written gratings with tunable periodicities, we actively engineer the spectral absorption profile, generating resonance peaks between 616 and 640 nm and enhancing absorption below 700 nm by more than 2-fold compared to planar films. This combination of scalable fabrication and on-demand spectral control establishes copper telluride as a promising material for programmable microstructured optoelectronics.
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