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Updated: Jan 13, 2026

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Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation.

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  • 1College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
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Summary

Researchers quantified stacking effects on graphite

Keywords:
c‐axis transportelectrical resistivitygraphiterotational misorientationsstacking faultsvan der Waals interfaces

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Engineering

Background:

  • Van der Waals (vdW) layered materials exhibit diverse electronic properties influenced by interlayer interactions.
  • Interfacial dislocations like stacking faults (SF) and rotational misorientations (RM) significantly impact interlayer transport.
  • Decoupling the effects of SF and RM on electrical transport has been a major challenge.

Purpose of the Study:

  • To quantitatively determine the individual contributions of stacking configurations to interlayer electrical transport in vdW materials.
  • To establish a methodology for decoupling the effects of stacking faults and rotational misorientations.
  • To investigate the tunability of dislocation structures in vdW materials.

Main Methods:

  • High-throughput measurement of c-axis resistivity in AB-stacked epitaxial single-crystal graphite.
  • Development of a decoupling strategy combining rotational locking of highly oriented pyrolytic graphite (HOPG) with in situ measurements.
  • Implementation of a pixel-array-based lateral measurement technique for spatial analysis of dislocation structures.

Main Results:

  • The intrinsic c-axis resistivity of AB-stacked graphite was measured.
  • The interlayer effective resistivity ratio of rotational misorientation (RM), stacking fault (SF), and AB stacking was quantified as approximately 4507:74:1.
  • A novel spatial perspective on dislocation structures and their tunability in vdW materials was revealed.

Conclusions:

  • This study provides the first quantitative understanding of how stacking states individually affect interlayer electrical transport in graphite.
  • The developed methodology offers a robust framework for investigating electrical transport in vdW materials with complex stacking.
  • The findings pave the way for advanced engineering of vdW materials with tailored electronic properties.