Orientation Engineering for High-Performance Sb₂S₃ Photodetectors.

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Antimony sulfide (Sb₂S₃) is an eco-friendly semiconductor with excellent optoelectronic properties.
• Its quasi-one-dimensional (Q1D) structure is ideal for charge transport in photodetectors.
• Controlling film orientation is crucial for optimizing Sb₂S₃ device performance.

Purpose of the Study:

• To engineer crystallographic orientation in Sb₂S₃ films.
• To develop high-performance photoconductive and photovoltaic photodetectors.
• To investigate the relationship between crystal orientation and device performance.

Main Methods:

• Hydrothermal deposition for [hk0]-oriented Sb₂S₃ films.
• Close-spaced sublimation for [hk1]-oriented Sb₂S₃ films.
• Fabrication and characterization of photoconductive and photovoltaic devices.

Main Results:

• [hk0]-oriented films yielded photoconductive detectors with responsivity of 2.032 A W^-1 and detectivity of 2.24 × 10¹³ Jones.
• [hk1]-oriented films yielded photovoltaic detectors with responsivity of 8.35 × 10^-2 A W^-1 and detectivity of 4.15 × 10¹² Jones.
• Demonstrated enhanced charge-carrier transport based on film orientation.

Conclusions:

• Crystallographic orientation significantly impacts Sb₂S₃ photodetector performance.
• Tailoring crystal orientation via deposition methods is effective for high-performance devices.
• Provides insights into optimizing Sb₂S₃ optoelectronics through structural control.