Field Effect Transistor
Potentiometry: Membrane Electrodes
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Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Tuluhan Olcayto Colak1, Mehmet Kurt1, Ecenaz Yaman1
1Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu 06560 Ankara, Turkey.
This study presents a simple ion-sensitive field-effect transistor (ISFET) device for detecting lithium ions in solutions. The developed device demonstrates a sensitivity of 2.85 mA/decade and a detection limit of 77 μM.
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