Phosphorus-Promoted VS₂ Nanosheets: Unlocking Defect Engineering and Interlayer Modulation for Enhanced Hydrogen...

Area of Science:

• Materials Science
• Electrochemistry
• Catalysis

Background:

• Vanadium disulfide (VS₂) is cost-effective and stable for alkaline hydrogen evolution reaction (HER) but underexplored due to low conductivity and limited active sites.
• Transition metal dichalcogenides (TMDCs) are common HER catalysts, but VS₂ offers a unique, cheaper alternative if challenges are addressed.

Purpose of the Study:

• To enhance the catalytic performance of VS₂ for HER through phosphorus (P) doping and defect engineering.
• To improve the intrinsic electronic conductivity and active site availability of VS₂ nanosheets.

Main Methods:

• A one-pot hydrothermal method was used to synthesize P-doped VS₂ nanosheets.
• Interlayer expansion and defect engineering were achieved via phosphorus doping.
• Electrochemical performance for HER was evaluated in 1 M KOH.

Main Results:

• P-doped VS₂ nanosheets exhibited a defect-rich, interlayer-expanded structure.
• Phosphorus doping redistributed electrons, improving charge balance between V and S atoms.
• The P-doped VS₂ catalyst achieved an overpotential of 191 mV at 10 mA cm⁻² and a low Tafel slope of 65.91 mV/dec.

Conclusions:

• Phosphorus doping significantly enhances the HER performance of VS₂ by improving conductivity and creating more active sites.
• The P-doped VS₂ catalyst shows remarkable kinetic activity and boosted performance, making it a viable alternative for HER catalysis.
• This work demonstrates a successful strategy for engineering VS₂ for efficient electrochemical applications.