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Published on: June 13, 2010
Fast and Sensitive On-Chip Homo/Heterodyne Detection for Terahertz Communication and Imaging
Xiaokai Pan1,2, Kaixuan Zhang3, Huichuan Fan1,2
1State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics (SITP), Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China.
Abstract:
Enhancing electromagnetic coupling to achieve interaction between light and matter is imperative to develop high-performance terahertz devices. Here, we report an ultrasensitive terahertz detector based on the quasi-one-dimensional, low-energy Dirac Fermions in the topological semimetal-TaNiTe5, integrated with an asymmetric bow-tie antenna to enhance field localization and directional light coupling. The device operates via photothermoelectric (PTE) effect, enabling self-powered, homo/heterodyne dual-mode detection across from millimeter to terahertz band. It achieves room-temperature operation at 0.435 THz with a responsivity of 0.77 A/W, a noise equivalent power (NEP) below 9.71 pW·Hz1/2, a specific detectivity (D*) of 1.03 × 1011 Jones, and a response time less than 20 ns. Furthermore, owing to the unique electronic band structure and excellent carrier dynamics characteristics of the semimetal-TaNiTe5, the device enables heterodyne mixing with a radio frequency (RF) bandwidth exceeds 108 GHz, accompanied by intermediate frequency (IF) bandwidth >26.5 GHz. Leveraging its excellent performance, we demonstrate its potential for sub-THz communications and high-quality imaging in terms of encrypted data-information exchange. Our work establishes a strategy for achieving chip-level integration with versatile abilities for communication, and imaging at terahertz band.
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