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Updated: Jan 13, 2026

Atomically Traceable Nanostructure Fabrication
Published on: July 17, 2015
Plasma-Enhanced Atomic Layer Deposition of AlF3 Antireflective Coatings via Pulse-Time Control of Fluorine Radical
Jing Zhang1, Zhixuan Zhang2,3, Chia-Hsun Hsu1
1Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology, The School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, China.
Abstract:
Plasma-enhanced atomic layer deposition (PEALD) is used to grow high-quality aluminum fluoride (AlF3) antireflective coatings via a safe, HF-free route using trimethylaluminum and SF6 plasma. In situ diagnostics reveal a reaction pathway mediated by a hydrogen-terminated fluorinated surface (s-FH). By systematically varying the plasma pulse duration, a critical process window is identified that balances efficient ligand removal against ion-induced structural damage. Within this optimized window, the films achieve ultra-low impurity levels and an atomically smooth morphology, increasing the optical transmittance of glass to (97.6 ± 0.5)%. This study establishes a clear link between fundamental plasma kinetics and functional optical performance, providing a robust, non-corrosive strategy for the rational design of metal-fluoride PEALD coatings.

