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Comprehensive Analysis of Temperature-Dependent Photoluminescence in Silica-Encapsulated CsPbBr3 and CsPbI3
Ming Mei1, Minju Kim1, Sang Hyuk Park2
1Department of Cogno-Mechatronics Engineering, College of Nanoscience and Nanotechnology, Pusan National University, Busan 46241, Republic of Korea.
Abstract:
The temperature-dependent photoluminescence of CsPbBr3/SiO2 and CsPbI3/SiO2 nanocrystals was investigated to understand the thermal stability of SiO2 encapsulation. At increased temperature, intensity quenching, linewidth broadening, energy level shift, and decay dynamics were evaluated as quantified parameters. Comprehensive analysis of these parameters supports that CsPbI3/SiO2 nanocrystals show a stronger interaction with phonons compared with CsPbBr3/SiO2 nanocrystals. Despite SiO2 encapsulation, we conclude that trapping states are still present and the degree of localization can be characterized in terms of short-lived decay time and thermal activation energy.
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