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A Fully Integrated Monolithic Monitor for Aging-Induced Leakage Current Characterization.

Emmanuel Nti Darko¹, Saeid Karimpour¹, Daniel Adjei¹

¹Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USA.

Sensors (Basel, Switzerland)

|January 10, 2026

Summary

This summary is machine-generated.

A new precision leakage current sensor monitors component aging like Time-Dependent Dielectric Breakdown (TDDB). This monolithic design offers wide dynamic range and high-voltage support for reliable device characterization.

Keywords:

ADC SAR TDDB digitizer leakage current monitor reliability

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Area of Science:

Electrical Engineering
Materials Science
Semiconductor Physics

Background:

Aging mechanisms like Time-Dependent Dielectric Breakdown (TDDB) are critical for electronic component reliability.
Accurate in-situ monitoring of leakage current is essential for understanding and predicting component degradation.

Purpose of the Study:

To present a novel, precision, wide-dynamic-range leakage current sensor for in-situ monitoring of aging mechanisms.
To enable high-voltage stress testing and accurate characterization of Time-Dependent Dielectric Breakdown (TDDB).

Main Methods:

Developed a fully monolithic architecture integrating a current-to-voltage front-end, tunable-gain amplifier, and a successive approximation register (SAR) analog-to-digital converter (ADC).
Implemented and evaluated a discrete-component prototype across a leakage current range of 1 nA to 1 μA.
Characterized sensor performance including integral non-linearity (INL) and differential non-linearity (DNL).

Main Results:

Achieved 12-bit resolution with measured INL within ±1.5 LSB and DNL within ±0.3 LSB.
Demonstrated linear current digitization over a wide dynamic range (1 nA to 1 μA).
Validated the sensor's capability for high-voltage stress monitoring.

Conclusions:

The proposed sensor design provides accurate and scalable TDDB characterization capabilities.
The monolithic architecture and high-voltage support make it suitable for embedded reliability monitoring in various electronic applications.
This sensor advances the field of semiconductor reliability testing and component lifetime prediction.