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Pruning random resistive memory for optimizing analog AI
Yi Li1,2,3,4,5, Songqi Wang1,2,3,5, Yaping Zhao1
1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China.
None:
The rapid expansion of AI models has intensified concerns over energy consumption. Analog in-memory computing with resistive memory offers a promising, energy-efficient alternative, yet its practical deployment is hindered by programming challenges and device non-idealities. Here, we propose a software-hardware co-design that trains randomly weighted resistive-memory neural networks via edge-pruning topology optimization. Software-wise, we tailor the network topology to extract high-performing sub-networks without precise weight tuning, enhancing robustness to device variations and reducing programming overhead. Hardware-wise, we harness the intrinsic stochasticity of resistive-memory electroforming to generate large-scale, low-cost random weights. Implemented on a 40 nm resistive memory chip, our co-design yields accuracy improvements of 17.3% and 19.9% on Fashion-MNIST and Spoken Digit, respectively, and a 9.8% precision-recall AUC improvement on DRIVE, while reducing energy consumption by 78.3%, 67.9%, and 99.7%. We further demonstrate broad applicability across analog memory technologies and scalability to ResNet-50 on ImageNet-100.
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