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FeOOH Cocatalysts with Gradient Oxygen Vacancy Distribution Enabling Efficient and Stable BiVO4 Photoanodes
Shiyuan Wang1, Mengjia Jiao1, Qian Ye1
1State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University and Shaanxi Joint Laboratory of Graphene (NPU), Shaanxi Laboratory for Advanced Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China.
A new photoetching method creates gradient oxygen vacancies in iron oxyhydroxide (FeOOH) cocatalysts. This enhances hole transport and boosts the performance of bismuth vanadate (BiVO4) photoanodes for water splitting.
Area of Science:
- Materials Science
- Electrochemistry
- Photocatalysis
Background:
- Highly active and stable cocatalysts are crucial for efficient bismuth vanadate (BiVO4) photoanodes.
- Thick iron oxyhydroxide (FeOOH) cocatalysts, while stable, exhibit poor hole transport, limiting photoanode performance.
Purpose of the Study:
- To enhance the performance of BiVO4 photoanodes by improving hole transport in FeOOH cocatalysts.
- To introduce gradient oxygen vacancies (GOv) in FeOOH layers using a simple photoetching strategy.
Main Methods:
- Fabrication of BiVO4 photoanodes with thick FeOOH cocatalysts.
- Application of a photoetching strategy to introduce gradient oxygen vacancies (GOv) into the FeOOH layer.
- Characterization of the structural and electronic properties of the modified FeOOH layer and the photoanode.
Main Results:
- The photoetching strategy successfully introduced gradient oxygen vacancies (GOv) in the FeOOH layer.
- GOv facilitated "relay transport" of photogenerated holes and provided abundant oxidation active sites.
- The modified BiVO4/FeOOH-GOv photoanode achieved a photocurrent density of 5.37 mA cm⁻² and 160 hours of stability at 1.23 VRHE.
Conclusions:
- The developed photoetching strategy effectively optimizes FeOOH cocatalysts for enhanced photoelectrochemical water splitting.
- Gradient oxygen vacancies significantly improve hole transport dynamics and oxygen evolution reaction (OER) activity.
- This approach offers a promising pathway for constructing highly efficient and stable photoelectrochemical devices.
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