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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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Wafer-Scale Bandgap-Tunable MoS₂/PbS Phototransistors Enabled by Solution Processing.

Ziheng Tang¹, Chengqian Cui², Xiaoli Jing³

¹Department of Mechanical Engineering, Tsinghua University, Beijing, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|January 12, 2026

Summary

We developed wafer-scale, bandgap-tunable Molybdenum disulfide (MoS₂)/lead sulfide (PbS) phototransistors using plasma treatment. This breakthrough enables tunable light absorption for advanced optoelectronics.

Keywords:

bandgap engineering heterostructures low‐dimensional electronics phototransistors solution‐processing

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Published on: November 28, 2017

Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Molybdenum disulfide (MoS₂)/lead sulfide (PbS) heterostructures offer strong light-matter interactions and high carrier mobility.
Bandgap engineering is crucial for optimizing light absorption in next-generation phototransistors.
Conventional fabrication methods for MoS₂/PbS heterojunctions limit bandgap tunability due to vertical coupling.

Purpose of the Study:

To realize wafer-scale, bandgap-tunable MoS₂/PbS phototransistors.
To investigate the band structure of vertical and lateral MoS₂/PbS heterojunctions for bandgap tunability.
To achieve wafer-scale uniformity and scalability in MoS₂/PbS heterojunction fabrication.

Main Methods:

Ab initio calculations to study the band structure of vertical and lateral MoS₂/PbS heterojunctions.
Investigation of plasma treatment to modulate thin-film surface energy for improved fabrication.
Fabrication of MoS₂/PbS phototransistors on a 4-inch wafer scale.

Main Results:

Lateral heterojunctions were found to dominate bandgap tunability by tuning the Type-II band alignment.
Plasma treatment enabled scaling of MoS₂/PbS heterojunction fabrication to a 4-inch wafer scale with 97% yield.
Achieved bandgap tunability from 1.24 eV to 0.61 eV, with phototransistors showing high responsivity (88 A/W), detectivity (4.77 × 10¹² Jones), and on/off ratio (3.16 × 10⁷).

Conclusions:

Lateral MoS₂/PbS heterojunctions are key for achieving tunable bandgaps.
Plasma treatment is an effective method for wafer-scale fabrication of uniform MoS₂/PbS heterojunctions.
This work provides a pathway for developing wafer-scale, bandgap-tunable optoelectronic devices.