Normal Strain under Axial Loading
Three-Phase Short Circuit—Unloaded Synchronous Machine
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jun 28, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Tae Gwan Park1,2, Xufan Li3, Kyungnam Kang1
1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.
Researchers directly observed ultrafast dynamics of defect-bound excitons in tungsten disulfide (WS₂) using advanced spectroscopy. This reveals crucial insights into defect-mediated processes for next-generation optoelectronics and quantum technologies.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: