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Fabrication of Spatially Confined Complex Oxides
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Internal Interfaces in Exfoliated MoS2 Exhibit Junction-like Behavior.

Emilia S W Russell1, Oliver M Rigby2, Mark Heath3

  • 1Department of Engineering, Durham University, Lower Mount Joy, South Road, DH1 3LE Durham, U.K.

ACS Applied Materials & Interfaces
|January 12, 2026
PubMed
Summary
This summary is machine-generated.

Mechanical exfoliation of molybdenum disulfide (MoS2) creates internal quasi-heterojunctions. These junctions exhibit unique electronic properties and rectification behavior, offering opportunities for quantum device engineering.

Keywords:
Band GapHeterojunctionInterface TrapsMoS2RectificationScanning Kelvin Probe Microscopy

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Mechanical exfoliation is common for van der Waals semiconductors but creates terraced structures.
  • Layer count variations lead to band gap changes across flakes.
  • Internal interfaces offer potential for engineered quantum building blocks.

Purpose of the Study:

  • Investigate the electronic structure of internal interfaces in MoS2, termed quasi-heterojunctions.
  • Understand the factors determining rectification properties at these junctions.
  • Explore the potential for creating quantum building blocks within single crystals.

Main Methods:

  • Photoluminescence and Raman spectroscopies
  • Kelvin probe force microscopy
  • Macroscopic transport measurements
  • Finite element Poisson solver for computational reconstruction

Main Results:

  • Identified heterojunctions in MoS2 transitions (5-layer to 2-layer to 1-layer).
  • Measured conduction band offsets of 22 and 24 meV.
  • Determined bandgap and electron affinity variations, and line defects, dictate rectification.
  • Observed nonlinear properties due to line defect-induced space-charge regions.

Conclusions:

  • Quasi-heterojunctions in MoS2 exhibit tunable electronic properties.
  • Line defects play a crucial role in the nonlinear electrical response.
  • This work provides a pathway for designing quantum devices using engineered interfaces in single-crystalline materials.