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Updated: Jan 15, 2026

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Slow Charge Dynamics at 2D Material/Dielectric Interfaces Revealed by Multimodal Microscopy.

Wei Zeng1, Jingyi Zhu1, Zhuo Xue1

  • 1Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China.

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|January 14, 2026
PubMed
Summary

Stable nanoelectronics require understanding charge decay at 2D material interfaces. This study reveals decay pathways and demonstrates 17-day charge retention using hexagonal boron nitride encapsulation for improved device stability.

Keywords:
defect energeticsinterfacial engineeringmultimodal microscopynanoelectronicsslow charge dynamicstwo-dimensional materials

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Science

Background:

  • Charge trapping and slow decay dynamics at 2D material-dielectric interfaces impede nanoelectronic performance and stability.
  • The underlying physical mechanisms are poorly understood due to challenges in monitoring nanoscale charge evolution and disentangling intrinsic from extrinsic factors.

Purpose of the Study:

  • To elucidate the charge decay pathways at 2D material-dielectric interfaces.
  • To develop a framework for designing stable 2D nanoelectronic devices.

Main Methods:

  • A multimodal microscopy platform combining conductive atomic force microscopy (c-AFM), time-resolved Kelvin probe force microscopy (TR-KPFM), and correlated spectroscopy.
  • Investigation of WS2/SiO2 and graphene/SiO2 interfaces.

Main Results:

  • WS2 interfaces exhibit triple-exponential decay, while graphene interfaces show double-exponential decay, correlating decay complexity with intrinsic material properties.
  • Three distinct charge decay channels were identified: environmental neutralization, material-specific intrinsic defect pathways (WS2-unique), and universal substrate trap pathways.
  • Hexagonal boron nitride (hBN) encapsulation effectively suppressed extrinsic decay channels, leading to charge retention exceeding 17 days.

Conclusions:

  • The study provides a comprehensive model for charge decay dynamics at 2D material interfaces.
  • Hexagonal boron nitride encapsulation is a viable strategy for achieving quasi-nonvolatile charge retention in 2D nanoelectronics.
  • The developed framework offers a roadmap for engineering stable and high-performance 2D nanoelectronic devices.