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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Updated: Jan 17, 2026

Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System

Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System

Published on: January 7, 2022

Robust interfaces enabled by chemically stable Li₃PO₄ buffer layer toward high-performance thin-film all-solid-state

Jian Wang¹, Xinyi He¹, Yonghe Zhuang²

¹Key Laboratory of MEMS of the Ministry of Education, School of Integrated Circuits, Southeast University, China.

Journal of Colloid and Interface Science

|January 14, 2026

Summary

This summary is machine-generated.

Controlling oxygen levels during sputtering deposition enhances lithium phosphate buffer layers in all-solid-state supercapacitors. This improves stability and performance for energy storage and smart window applications.

Keywords:

Composition and chemical stability Dual-functional devices Interface stabilization Li(3)PO(4) buffer layer Thin-film all-solid-state supercapacitors (ASSSCs)

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Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing

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Published on: March 7, 2018

Area of Science:

Materials Science
Electrochemistry
Energy Storage

Background:

Lithium phosphate (Li₃PO₄) is a key buffer layer for stabilizing interfaces in thin-film all-solid-state supercapacitors (ASSSCs).
The P-O-P bonds in Li₃PO₄ are susceptible to dissociation, causing interfacial degradation and limiting device performance.
Improving the chemical stability of Li₃PO₄ is crucial for advanced ASSSCs.

Purpose of the Study:

To investigate the impact of oxygen partial pressure (P<0xE2><0x82><0x92>) during sputtering on Li₃PO₄ film bonding.
To enhance the chemical stability and ionic conductivity of Li₃PO₄ buffer layers.
To optimize Li₃PO₄ for improved electrochemical and electrochromic performance in ASSSCs.

Main Methods:

Systematic investigation of Li₃PO₄ film deposition under varying oxygen partial pressures.
Analysis of chemical bonding configurations using sputtering techniques.
Electrochemical characterization of Li₃PO₄-coated ASSSCs, including capacitance, rate capability, and cycling stability tests.
Evaluation of electrochromic properties.

Main Results:

Controlled P<0xE2><0x82><0x92> effectively converted unstable P-O-P bonds to stable PO and Li-O-P configurations.
Optimized Li₃PO₄ films exhibited enhanced ionic conductivity and interfacial stability.
Li₃PO₄-coated ASSSCs showed significantly higher specific capacitance (22.5 vs. 9.0 mF cm⁻²), superior rate capability (11.2 vs. 0.9 mF cm⁻²), and better cycling stability (92.9% vs. 77.8% retention).
The optimized films also demonstrated superior electrochromic functionality.

Conclusions:

Oxygen partial pressure is a critical parameter for tailoring Li₃PO₄ film properties.
Enhanced Li₃PO₄ buffer layers improve ASSSC performance and stability.
These findings offer a pathway for developing high-performance energy storage devices and smart windows.