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AlGaN-based deep ultraviolet vertical-cavity surface-emitting lasers on a flexible substrate.

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    Optics Letters
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    Researchers developed flexible deep ultraviolet (DUV) vertical-cavity surface-emitting lasers (VCSELs) using AlGaN. This breakthrough enables advanced flexible photonic devices for smart light sources and integrated systems.

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    Area of Science:

    • Optoelectronics
    • Materials Science
    • Semiconductor Physics

    Background:

    • Flexible electronics are crucial for next-generation devices.
    • Vertical-cavity surface-emitting lasers (VCSELs) offer unique advantages for light source applications.
    • Deep ultraviolet (DUV) light sources are essential for various scientific and industrial applications.

    Purpose of the Study:

    • To demonstrate AlGaN-based deep ultraviolet (DUV) VCSELs on a flexible substrate.
    • To explore the fabrication of flexible DUV photonic devices.
    • To investigate the lasing characteristics of DUV VCSELs on flexible platforms.

    Main Methods:

    • Fabrication of AlGaN quantum well heterojunctions.
    • Selective removal of a GaN sacrificial layer via electrochemical etching.
    • Transfer of the heterojunction onto a flexible substrate.
    • Deposition of dielectric distributed Bragg reflectors (DBRs) to form the resonant cavity.

    Main Results:

    • Successful demonstration of AlGaN-based DUV VCSELs on a flexible substrate.
    • Achieved single-mode lasing at 294.2 nm with a threshold power density of 7.4 MW/cm².
    • Observed multimode lasing attributed to DBR non-uniformities.
    • Lasing performance was confirmed at room temperature with a linewidth of 0.39 nm.

    Conclusions:

    • This work presents a viable method for creating flexible DUV VCSELs.
    • The developed technology paves the way for flexible photonic integration in the DUV spectrum.
    • Enables new possibilities for smart light sources and multifunctional flexible photonic platforms.