How ALD Settings May Affect the Chemical Structure of the (Zn1-xSnx)Oy/Wide-Gap (Ag,Cu)GaSe2 Thin-Film Solar Cell
Angelika Demling1, Jan Keller2, Regan G Wilks1,3
1Department of Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB), 12489 Berlin, Germany.
Abstract:
In this work, the effect of different atomic layer deposition (ALD) settings on the interface formation between ALD-grown (Zn1-xSnx)Oy (ZTO) buffers with varying [Sn]/([Sn]+[Zn]) composition and wide-band gap silver-alloyed CuGaSe2 (ACGSe) absorbers is investigated using X-ray fluorescence, transmission electron microscopy, and synchrotron-based soft and hard X-ray photoelectron spectroscopy. For buffer layers prepared in an industry-scale ALD reactor, we discover the formation of an interlayer best described by a mixture of ZnO with a minor (<10%) amount of Ga2O3, which is not present in similar layer stacks prepared in a lab-scale R&D-type ALD reactor. In addition, we show that ZTO/ACGSe-based solar cells containing such an interlayer have significantly lower fill factors compared to their counterparts without this interlayer, suggesting the presence of an electron transport barrier at the front contact.
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