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A universal design principle for switchable control of the second-order nonlinear Hall effect.
Xiaoliang Xiao1,2, Xingyu Yue3,4, Jinyang Ni5
1Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510006, People's Republic of China.
Reports on Progress in Physics. Physical Society (Great Britain)
|January 16, 2026
Summary
Researchers developed a new method to control the nonlinear Hall effect (NLHE) using an electric gate field. This non-volatile approach enables switchable nonlinear Hall currents in bilayer materials without magnetism.
Area of Science:
- Condensed matter physics
- Materials science
- Quantum mechanics
Background:
- Controlling the nonlinear Hall effect (NLHE) non-volatilely is crucial for device applications.
- Effective gating control for NLHE remains a significant challenge.
Purpose of the Study:
- To propose a universal design principle for gate-field control of NLHE in bilayer systems.
- To demonstrate switchable second-order NLHE using an electric gate field.
Main Methods:
- First-principles calculations
- Symmetry analysis
- Investigating bilayer SnSe and SnTe
Main Results:
- A hidden polarization activates a layer-locked Berry curvature dipole (BCD) under a gate field, inducing a giant nonlinear Hall current.
- Gate-field reversal switches the preferred pseudospin orientation, enabling switchable second-order NLHE.
- The mechanism is independent of intrinsic magnetism.
Conclusions:
- A universal design principle for switchable second-order NLHE is demonstrated.
- This approach offers binary ON/OFF switching for nonlinear Hall transport.
- The findings can be extended to other gate-field-controllable nonlinear transport and optical phenomena.
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