Atomic-scale mechanism unlocks thermal-stable high-κ performance in HfO2 via coherent interfaces

Yihao Shen1, Hongzheng Wang2, Xiaochun Ma2

  • 1State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.

Nature Communications
|January 16, 2026
PubMed
Summary

Researchers stabilized crucial tetragonal/orthorhombic-antiferroelectric morphotropic phase boundaries in hafnium oxide (HfO2)-based dielectrics. This breakthrough enhances thermal stability for next-generation complementary-metal-oxide-semiconductor electronics.

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