Large-area non-stoichiometric phase transition in transition metal chalcogenide films
Zhongqiang Chen1, Jin-An Shi2, Jianqi Huang3,4
1State Key Laboratory of Spintronics, Jiangsu Provincial Key Laboratory of Third Generation Semiconductors and High Energy Efficiency Devices, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
None:
Phase engineering is of vital importance for determining the material functionalities and expanding the material library. However, the controllable and scalable phase transition of transition metal chalcogenides remains extremely challenging. The microscopic observation of the phase evolution pathway is an essential prerequisite for understanding the phase transition mechanism. Here we atomically observe a non-stoichiometric phase evolution process in large-scale superconducting PdTe2 films under heating through in situ scanning transmission electron microscopy. The unprecedented phase transition from PdTe2 to PdTe via atomic reconstruction is evidenced and theoretically verified by our machine learning molecular dynamics simulations. In particular, forming the intermediate state of PdTe2/PdTe heterostructure during the phase transition robustly generates giant-helicity-dependent terahertz emission due to inversion symmetry breaking. Our results not only provide insights into the atomic reconstruction in transition metal chalcogenides but also offer a general strategy for the fabrication of large-area transition metal monochalcogenide films and heterostructures, potentially applicable for various device applications.
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