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Updated: Jan 18, 2026

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A Hidden Photoinduced Phase-Transition Pathway in Strain-Engineered VO2.

Soon Hee Park1, Jaeku Park1, Hyeong-Do Kim1

  • 1Pohang Accelerator Laboratory, POSTECH, Pohang, Gyeongbuk, Republic of Korea.

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|January 17, 2026
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Summary
This summary is machine-generated.

Photoexcitation drives a hidden phase transition in vanadium dioxide (VO2) thin films. The structural change occurs before the electronic insulator-to-metal transition, revealing strain-light coupling for ultrafast control.

Keywords:
Mott transitionX‐ray free electron laserphotoinduced insulator‐metal transitiontime‐resolved X‐ray diffractiontime‐resolved terahertz spectroscopyvanadium dioxide

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Materials

Background:

  • Photoexcitation is a key method for inducing nonequilibrium states in quantum materials.
  • Vanadium dioxide (VO2) is a prototypical correlated oxide used to study photoinduced insulator-metal transitions.
  • The precise sequence of structural and electronic changes in VO2 under photoexcitation is still debated.

Purpose of the Study:

  • To investigate the hidden photoinduced transition pathway in epitaxially strained VO2 thin films.
  • To determine the temporal order of structural and electronic transitions under photoexcitation.
  • To understand the role of lattice dynamics and Mott correlations in nonequilibrium phase transitions.

Main Methods:

  • Femtosecond X-ray diffraction to probe transient structural changes.
  • Time-resolved terahertz spectroscopy to monitor electronic gap dynamics.
  • Fabrication of epitaxially strained VO2 thin films.

Main Results:

  • A hidden photoinduced transition pathway was uncovered in strained VO2 films.
  • The structural transition, marked by the disappearance of vanadium dimers and dynamic tensile strain, precedes the electronic insulator-metal transition.
  • The electronic gap closure occurs after strain relaxation, reversing the canonical temporal order.

Conclusions:

  • Lattice dynamics play a crucial role in dictating electronic properties under nonequilibrium conditions, driven by Mott correlations.
  • Strain-light coupling emerges as a significant principle for ultrafast control of phase transitions.
  • These findings offer new possibilities for developing reconfigurable electronic and photonic devices based on correlated oxides.