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Published on: April 13, 2022
Magnetocrystalline Anisotropy Enables Field-Free Deterministic Switching in Tm3Fe5O12/Pt Bilayers: An Atomistic Spin
Shanshan Hu1,2, Junya Huang2, Cuixiu Zheng2
1Key Laboratory of Micro and Nano Photonic Structures (MOE), College of Future Information Technology, Fudan University, Shanghai 200433, China.
Intrinsic cubic magnetocrystalline anisotropy in TmIG/Pt bilayers enables field-free magnetization switching. This symmetry-driven mechanism is key for developing scalable, energy-efficient spintronic memory and terahertz devices.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Scalable and energy-efficient spintronic memory requires deterministic, field-free magnetization switching.
- Existing methods face challenges in achieving reliable control.
Purpose of the Study:
- To uncover the microscopic mechanism of 3-fold rotation and mirror (3m)-symmetric switching in Tm3Fe5O12 (TmIG)/Pt bilayers.
- To establish a symmetry-based design principle for ferrimagnetic spintronic devices.
Main Methods:
- Atomistic spin dynamics simulations were employed.
- Epitaxial (111)-oriented TmIG/Pt bilayers were investigated.
- Comparative simulations were performed on Y3Fe5O12 (YIG).
Main Results:
- Intrinsic cubic magnetocrystalline anisotropy (MCA) of TmIG breaks mirror symmetry, enabling 3m-symmetric torques for field-free switching.
- Switching demonstrates strong angular selectivity and toggle-like behavior under large spin-orbit torque.
- MCA-driven field-free switching is a universal feature in rare-earth iron garnets.
Conclusions:
- Symmetry breaking via MCA is a viable pathway for deterministic, field-free magnetization switching.
- This research provides a design principle for ultrafast, low-power spintronic memory and terahertz spintronics.
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