Investigating the Growth of GaSb Single Crystals through Optimized LEC Method Utilizing Finite Element Simulation and...

Area of Science:

• Materials Science
• Crystal Growth
• Semiconductor Physics

Background:

• Growing large-sized compound semiconductor single crystals presents significant challenges.
• Optimizing crystal growth requires precise control over heat flux and interface morphology.

Purpose of the Study:

• To optimize the growth parameters for large-sized Gallium Antimonide (GaSb) single crystals.
• To reduce defects and improve the crystal quality of GaSb single crystals.

Main Methods:

• Utilized CGsim simulation software integrating finite element method and machine learning (ML).
• Performed ML validation across various crucible rotation speeds and crystal position (CP) configurations.
• Evaluated crystal quality using X-ray double crystal rocking curves and optical microscopy.

Main Results:

• Reduced dislocation density in 6-in. GaSb single crystals from 1039 to 369 cm^-2.
• Narrowed X-ray rocking curve full width at half-maximum (fwhm) from 29 to 28.5 arcsec.
• Optimized growth parameters reduced the protrusion angle to 0.086°.

Conclusions:

• CGsim simulations combined with ML-optimized parameters significantly lower defect formation.
• Improved crystal quality and reduced defects in large-sized GaSb single crystals.
• This approach is effective for growing high-quality compound semiconductor single crystals.