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High-Performance Electrochemically Gated Single-Molecule Transistor Enabled by Interfacial Engineering
Rui Wang1, Yingjie Li1, Siyu Yan1
1Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China.
Abstract:
Molecular-scale transistors, particularly those with high performance, are critical for advancing nanoelectronics toward practical applications. However, developing high-performance single-molecule transistor materials remains a significant challenge. Here, we design and synthesize a series of diketopyrrolopyrrole (DPP)-based narrow bandgap molecular wires with tailored molecule-electrode coupling. The molecular wire DPP-C-SMe, featuring electronic decoupling at the molecule-electrode interface, exhibits remarkable electrochemical gated modulation (>200-fold) and a low subthreshold swing (105 mV dec-1) within a 1 V potential window─significantly surpassing its coupled counterpart and ranking among the highest-performing single-molecule electrochemical transistors reported to date. Through combined conductance measurements, transition voltage spectroscopy (TVS), and DFT calculations, we elucidate that the electronic decoupling in DPP-C-SMe reduces the off-state conductance by lowering the low-bias transmission coefficient, while the preserved favorable energy alignment enables efficient nonresonant/near-resonant switching under electrochemical gating. This cooperative design principle is the key to its superior transistor performance. These findings provide a new strategic design principle that synergistically integrates a narrow-band gap molecular core with tailored interfacial engineering for high-performance single-molecule electrochemical transistors and advances the molecular-scale control of charge transport in functional nanoelectronics.
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