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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Ultrahigh-Responsivity GaON Thin Film Transistor Photodetectors with Improved Air Stability

Junyan Ren1,2, Huize Tang1,3, Yiting Cheng1,2

  • 1Laboratory of Atomic-scale and Micro & Nano Manufacturing, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of China.

The Journal of Physical Chemistry Letters
|January 19, 2026
PubMed
Summary

This study enhances amorphous gallium oxide (Ga2O3) photodetectors for solar-blind ultraviolet detection. Combining N-doping, low-temperature crystallization, and an aluminum oxide (Al2O3) capping layer significantly boosts responsivity and air stability.

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