Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling

Poorna Sundari M1, Lakshmi Priya G2,1

  • 1School of Electronics Engineering, Vellore Institute of Technology, Chennai 600127, India.

ACS Applied Bio Materials
|January 20, 2026
PubMed
Summary

This study introduces a novel Recessed Drain Heterojunction Vertically Stacked Gate-All-Around Nanosheet Tunneling Field-Effect Transistor (RD-HJ-VS-GAA-NS-TFET) biosensor for rapid, cost-effective brain stroke detection. The advanced design enhances sensitivity and accuracy in distinguishing between healthy and stroke-affected brain tissues.

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