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Bioelectronic VertiTFET with Multilayer Nanosheet Gating for Dual-Mode, Ultra-Sensitive Stroke State Profiling
Poorna Sundari M1, Lakshmi Priya G2,1
1School of Electronics Engineering, Vellore Institute of Technology, Chennai 600127, India.
This study introduces a novel Recessed Drain Heterojunction Vertically Stacked Gate-All-Around Nanosheet Tunneling Field-Effect Transistor (RD-HJ-VS-GAA-NS-TFET) biosensor for rapid, cost-effective brain stroke detection. The advanced design enhances sensitivity and accuracy in distinguishing between healthy and stroke-affected brain tissues.
Area of Science:
- Nanotechnology and Nanosensors
- Biomedical Engineering
- Materials Science
Background:
- Current stroke detection methods can be time-consuming and costly.
- There is a need for rapid, label-free Point-of-Care (POC) diagnostic platforms.
- Tunneling Field-Effect Transistors (TFETs) offer potential for low-power biosensing applications.
Purpose of the Study:
- To investigate a novel Recessed Drain (RD) Heterojunction (HJ) Vertically Stacked (VS), Gate-All-Around (GAA), and Nanosheet (NS) TFET biosensor for brain stroke detection.
- To evaluate the performance of the proposed biosensor against conventional architectures.
- To analyze the impact of various device parameters on sensitivity and switching characteristics.
Main Methods:
- Fabrication and simulation of a novel RD-HJ-VS-GAA-NS-TFET biosensor.
- Comparative analysis of conventional silicon versus strained silicon nanosheet channels.
- Sensitivity analysis based on Drain Current (ID), Subthreshold Swing (SS), and ON/OFF ratio (ION/IOFF) by varying dielectric constant (k) representing different tissue states.
Main Results:
- The proposed RD-HJ-VS-GAA-NS-TFET biosensor demonstrates superior performance compared to planar MOSFETs, multigate FETs, and nanowire FETs.
- The vertically stacked nanosheet channels enhance sensing surface area and electrostatic control.
- Significant variations in the ION/IOFF ratio were observed for hemorrhagic (3.58 × 10^11), healthy (5.40 × 10^11), and ischemic (1.05 × 10^12) brain tissue states, indicating high sensitivity.
Conclusions:
- The RD-HJ-VS-GAA-NS-TFET biosensor is a promising label-free, POC platform for rapid and accurate stroke detection.
- The multilayered nanosheet design and enhanced electrostatic control contribute to improved biomolecule interaction and device sensitivity.
- The device's ability to differentiate between various brain tissue states highlights its potential for clinical diagnostics.
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