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Intrinsically stretchable 2D MoS2 transistors.

Kyunghun Kim1, Yasutaka Kuzumoto1, Changhoon Jung1

  • 1Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon, Republic of Korea.

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|January 20, 2026
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Summary
This summary is machine-generated.

High-performance intrinsically stretchable thin-film transistors were developed using molybdenum disulfide flakes. These stretchable electronics maintain stability under strain, addressing a key need for advanced deformable systems.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Intrinsically stretchable electronics offer novel form factors and capabilities for next-generation devices.
  • Development of high-performance stretchable n-type materials is crucial for complementary metal-oxide-semiconductor integration.

Purpose of the Study:

  • To report high-performance intrinsically stretchable thin-film transistors using two-dimensional semiconducting flakes.
  • To investigate the strain accommodation mechanism and charge transport stability in these stretchable transistors.

Main Methods:

  • Fabrication of n-type molybdenum disulfide (MoS2) thin-film transistors.
  • Characterization of device performance under mechanical strain (up to 20%).
  • Structural analysis to understand strain relaxation mechanisms via interflake motions.

Main Results:

  • Achieved maximum field-effect mobility of 12.5 cm2V-1s-1 (average 8 cm2V-1s-1) and on/off current ratio > 10^7 under 20% strain.
  • Demonstrated stable performance during cyclic stretching tests.
  • Identified interflake motions and van der Waals bonds as key to stress relaxation and maintained charge transport.

Conclusions:

  • The developed MoS2 transistors exhibit excellent stretchability and stable performance.
  • The strain accommodation mechanism provides a generalizable pathway for integrating 2D semiconductors into stretchable electronics.
  • Addresses the need for high-performance stretchable n-type materials, enabling scalable and logically capable deformable systems.