Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Zener Diodes01:16

Zener Diodes

1.1K
Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
1.1K
The Ideal Diode01:15

The Ideal Diode

2.1K
A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
2.1K
Diode: Forward bias01:20

Diode: Forward bias

2.1K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.1K
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

1.1K
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
1.1K
Diode: Reverse bias01:14

Diode: Reverse bias

1.8K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.8K
Small-signal Diode Model01:18

Small-signal Diode Model

1.5K
In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Superfine Grinding for Edible Powders: Mechanisms, Quality Regulation, Limitations, and Synergistic Strategies.

Foods (Basel, Switzerland)·2026
Same author

Rationally designed tetrahedral-configuration-matching methane trap in a metal-organic framework for efficient CH<sub>4</sub>/N<sub>2</sub> separation.

Chemical science·2026
Same author

A Clathrate-Like Methane Trap for Capture of Mine Ventilation Air Methane.

Angewandte Chemie (International ed. in English)·2026
Same author

Fast superconducting qubit control with subharmonic drives.

Nature communications·2025
Same author

Engineering a Multilevel Bath for Transmons with Three-Wave Mixing and Parametric Drives.

Physical review letters·2025
Same author

Charge Disproportionation at Twisted SrTiO<sub>3</sub> Bilayer Interface Driven by Local Atomic Registry.

ACS nano·2025
Same journal

High Pressure Synthesis of Ultrasmall Nanodiamonds with Nitrogen Vacancy Centers.

Nano letters·2026
Same journal

Efros-Shklovskii Law at the Thinnest Limit of a Material.

Nano letters·2026
Same journal

Oxygen Electronic Configuration Modulation Triggering Reversible Anionic Redox Chemistry toward High Voltage Tolerant Sodium Layered Oxide.

Nano letters·2026
Same journal

Development of a Nanoscale Protein-Protein Mapping of PDE4 Interface-Disrupting Peptides.

Nano letters·2026
Same journal

Lubricin-Protected Plasmonic Nanoslides Enable Stable, Reusable, Nonfouling, and Ultrasensitive Biomimetic-SERS Sensing for the Detection of Vancomycin in Unprocessed Whole Blood.

Nano letters·2026
Same journal

Forcing a Molecule to Switch: Quantifying Mechanical Control at the Atomic Scale.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Jan 22, 2026

In Vitro Evaluation of The Effects Of Er,Cr:YSGG and Diode Lasers Used on Titanium Cylinder
07:05

In Vitro Evaluation of The Effects Of Er,Cr:YSGG and Diode Lasers Used on Titanium Cylinder

Published on: June 6, 2025

537

KTaO3-Based Supercurrent Diode.

Muqing Yu1, Jieun Kim2, Ahmed Omran1

  • 1Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.

Nano Letters
|January 21, 2026
PubMed
Summary
This summary is machine-generated.

Researchers demonstrate the supercurrent diode effect (SDE) in LaAlO3/KTaO3 interfaces by engineering nanoscale superconducting weak links. This breakthrough enables tunable SDE polarity and efficient rectification, paving the way for dissipationless electronics.

Keywords:
KTaO3c-AFM lithographyoxide interfacesupercurrent diode effectvortex dynamics

More Related Videos

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

28.5K
Pulsed Laser Diode-Based Desktop Photoacoustic Tomography for Monitoring Wash-In and Wash-Out of Dye in Rat Cortical Vasculature
06:46

Pulsed Laser Diode-Based Desktop Photoacoustic Tomography for Monitoring Wash-In and Wash-Out of Dye in Rat Cortical Vasculature

Published on: May 30, 2019

8.8K

Related Experiment Videos

Last Updated: Jan 22, 2026

In Vitro Evaluation of The Effects Of Er,Cr:YSGG and Diode Lasers Used on Titanium Cylinder
07:05

In Vitro Evaluation of The Effects Of Er,Cr:YSGG and Diode Lasers Used on Titanium Cylinder

Published on: June 6, 2025

537
Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

28.5K
Pulsed Laser Diode-Based Desktop Photoacoustic Tomography for Monitoring Wash-In and Wash-Out of Dye in Rat Cortical Vasculature
06:46

Pulsed Laser Diode-Based Desktop Photoacoustic Tomography for Monitoring Wash-In and Wash-Out of Dye in Rat Cortical Vasculature

Published on: May 30, 2019

8.8K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Electronics

Background:

  • The supercurrent diode effect (SDE) is crucial for dissipationless electronics and quantum circuits.
  • Achieving SDE necessitates breaking time-reversal and inversion symmetry in superconducting devices.

Purpose of the Study:

  • To engineer and demonstrate SDE in reconfigurable superconducting weak links at the LaAlO3/KTO interface.
  • To investigate the tunability of SDE polarity and rectification efficiency.
  • To understand the underlying physical mechanisms of SDE in this system.

Main Methods:

  • Utilized conductive atomic force microscope (c-AFM) lithography to pattern nanoscale weak links.
  • Fabricated devices at the LaAlO3/KTO interface.
  • Employed modest out-of-plane magnetic fields to induce and control SDE.
  • Performed time-dependent Ginzburg-Landau simulations.

Main Results:

  • Successfully realized SDE in engineered LaAlO3/KTO weak links.
  • Demonstrated reversible SDE polarity by altering weak link geometry.
  • Achieved rectification efficiencies up to 13% under optimal magnetic fields.
  • Simulations attributed SDE to asymmetric vortex motion in the engineered geometry.

Conclusions:

  • The LaAlO3/KTO interface provides a versatile platform for SDE.
  • Engineered nanoscale weak links offer precise control over SDE.
  • This work lays the foundation for novel quantum circuit elements based on vortex dynamics.