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Dual-Functional Optoelectronic Devices Composed of Cs3Cu2I5/Graphene/Ge Multi-Heterostructures Enabling

Chao Xie1, Deng Ke1, Shunzi Li1

  • 1Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, State Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei, Anhui, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|January 22, 2026
PubMed
Summary

This study presents a novel dual-functional optoelectronic device. It achieves high-performance deep-ultraviolet (DUV) synaptic behavior and self-driven near-infrared (NIR) photodetection simultaneously using a Cs3Cu2I5/graphene/Ge heterostructure.

Keywords:
deep‐ultraviolet synapsemulti‐functionalnear‐infrared photodetectoroptoelectronic reservoir computingsingle‐pixel imaging

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Neuromorphic Computing

Background:

  • Advancing optoelectronic devices requires integration of neuromorphic processing and photodetection.
  • Developing multi-functional devices is key for next-generation intelligent applications.

Purpose of the Study:

  • To present a dual-functional optoelectronic device with simultaneous deep-ultraviolet (DUV) synaptic behavior and self-driven near-infrared (NIR) photodetection.
  • To explore the potential of Cs3Cu2I5/graphene/Ge heterostructures for integrated optoelectronic systems.

Main Methods:

  • Fabrication of a multi-heterostructure device using Cs3Cu2I5/graphene/Ge.
  • Leveraging the photogating effect for DUV synaptic behavior with B4PyMPM for electron trapping.
  • Utilizing the photovoltaic effect for self-driven NIR photodetection.

Main Results:

  • Achieved high-performance DUV synaptic behavior with applications in fingerprint recognition (97.8% accuracy) and reservoir computing (100% accuracy).
  • Demonstrated self-driven NIR photodetection with enhanced photoresponse due to Cs3Cu2I5 acting as an anti-reflection layer.
  • Successfully performed single-pixel NIR optical imaging.

Conclusions:

  • The developed Cs3Cu2I5/graphene/Ge device offers simultaneous DUV neuromorphic functions and NIR photodetection.
  • This work inspires the design of advanced multi-functional optoelectronic devices for integrated and intelligent applications.