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Updated: Jan 24, 2026
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
8.1K
Self-powered photodetector based on CuInP2S6/MoSe2heterostructure.
Canhui Pan1, WeiKe Wang1, Jiaxin Cheng1,2
1Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Institute of Interdisciplinary Studies Department of Physics and Hunan Research Center of the Basic Discipline for Quantum Effects and Quantum Technologies, Hunan Normal University, Changsha 410081, People's Republic of China.
Summary
This study fabricates novel ferroelectric heterostructures using copper indium phosphorus sulfide (CIPS) and Molybdenum diselenide (MoSe2). These devices demonstrate tunable photoelectric responses and enable self-powered operation, paving the way for advanced photodetectors.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Optoelectronics
Background:
- Two-dimensional (2D) heterostructures are crucial for advanced optoelectronic devices.
- Ferroelectric materials offer unique properties for device modulation.
- Copper indium phosphorus sulfide (CIPS) and Molybdenum diselenide (MoSe2) are promising 2D materials.
Purpose of the Study:
- To fabricate and investigate the optoelectronic properties of CIPS/MoSe2 ferroelectric heterostructures.
- To explore the gate voltage tunability of the photoelectric response.
- To assess the potential for self-powered photodetector applications.
Main Methods:
- Fabrication of CIPS/MoSe2 heterostructures using the scotch-tape method.
- Characterization of optoelectronic properties under varying gate voltages.
- Analysis of responsivity and detectivity metrics.
Main Results:
- The CIPS/MoSe2 heterostructures exhibit a gate voltage-tunable photoelectric response.
- Responsivity improved by ~3902% (max 5.57 A/W) and detectivity by 1785% (max 6.66 × 10^8 Jones).
- Ferroelectricity-induced electric fields enabled self-powered operation with high responsivity (170.86 mA/W) and detectivity (2.66 × 10^9 Jones).
Conclusions:
- Ferroelectric heterojunctions show significant potential for self-powered photodetector applications.
- Gate voltage control offers a powerful method for tuning optoelectronic device performance.
- The CIPS/MoSe2 system represents a promising platform for next-generation photodetectors.
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