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Self-powered photodetector based on CuInP2S6/MoSe2heterostructure
Canhui Pan1, WeiKe Wang1, Jiaxin Cheng1,2
1Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education Institute of Interdisciplinary Studies Department of Physics and Hunan Research Center of the Basic Discipline for Quantum Effects and Quantum Technologies, Hunan Normal University, Changsha 410081, People's Republic of China.
Abstract:
The construction of two-dimensiona heterostructures offers a novel strategy for modulating optoelectronic devices. In this work, we fabricated CuInP2S6(CIPS)/MoSe2ferroelectric heterostructures by scotch-tape method and investigated its optoelectronic properties. The detector shows a gate voltage tunable photoelectric response, the responsivity is improved by approximately 3902%, achieving a maximum of 5.57 A W-1and the detectivity by 1785%, reaching 6.66 × 108Jones. Interestingly, upon the application of a gate voltage, the polarized electric field arising from ferroelectricity of CIPS enables the device to operate in a self-powered mode. Remarkably, the devices attained a high responsivity of 170.86 mA W-1and a detectivity of 2.66 × 109Jones, respectively. Our research demonstrates that ferroelectric heterojunctions exhibit significant potential for application in self-powered photodetectors.
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