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Correction: Highly-efficient and scalable TrioN (3N0C) synaptic cell for analog process-in-memory.

Junyoung Choi1, Byoungwoo Lee1, Jinho Byun1

  • 1Department of Materials Science and Engineering, Postech, Pohang, 37673, Republic of Korea. kimseyoung@postech.ac.kr.

Materials Horizons
|January 23, 2026
PubMed
Summary
This summary is machine-generated.

This correction addresses errors in a previous study on the TrioN (3N0C) synaptic cell, a key component for analog in-memory computing. The updated findings ensure accuracy for future research in efficient and scalable neuromorphic hardware.

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

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