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Hysteresis Engineering in 2D Field-Effect Transistors.

Ziyuan Meng1, Zhe Sun1, Yi Du1,2

  • 1School of Physics, Beihang University, Beijing, P. R. China.

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|January 25, 2026
PubMed
Summary
This summary is machine-generated.

This review explores hysteresis in 2D field-effect transistors (FETs), detailing its origins and suppression strategies. Understanding and controlling hysteresis is key to advancing 2D semiconductor electronics for future integrated circuits.

Keywords:
2D materialsfield‐effect transistorshysteresisoperational stabilitysemiconductor

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Area of Science:

  • Materials Science
  • Electronics Engineering
  • Semiconductor Physics

Background:

  • Atomically thin 2D semiconductors offer unique properties for advanced field-effect transistors (FETs).
  • These 2D FETs show promise for extending Moore's Law beyond silicon limitations.
  • Challenges remain, including synthesis, contact resistance, stability, and hysteresis.

Purpose of the Study:

  • To review recent progress in understanding and controlling hysteresis in 2D FETs.
  • To investigate the physical origins and impact of hysteresis on device performance.
  • To explore strategies for hysteresis suppression and functional exploitation in emerging 2D materials.

Main Methods:

  • Literature review of recent advancements in 2D FET research.
  • Analysis of factors contributing to hysteresis, including defects and interfaces.
  • Examination of device engineering techniques for hysteresis management.

Main Results:

  • Hysteresis in 2D FETs can stem from defect states, nonoptimal interfaces, and environmental factors.
  • Various strategies exist to suppress or control hysteresis for improved device stability.
  • Hysteresis can be exploited for specific functionalities in emerging 2D semiconductor devices.

Conclusions:

  • Addressing hysteresis is crucial for the practical implementation of 2D FETs.
  • Controlled hysteresis management can unlock new applications for next-generation electronics.
  • Combining 2D materials with device engineering will accelerate the development of advanced integrated circuits.