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Updated: Jan 28, 2026

The Frequency Domain Thermoreflectance Technique for Thermal Property Measurements
Published on: December 5, 2025
Local active memristive oscillator enables controllable complex behaviours and frequency domain extraction
Yanghao Wang1, Pek Jun Tiw1, Yuheng Liu1
1Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing 100871, China.
Vanadium oxide devices near the Mott transition offer new possibilities for neuromorphic computing. A new model and control method enable complex computations, outperforming traditional methods.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Neuroscience
Background:
- Physical non-linearities near the Mott transition are key for neuromorphic computing.
- Current research often simplifies Mott devices, lacking unified models for complex dynamics.
Purpose of the Study:
- Develop a thermodynamic compact model for vanadium oxide devices.
- Propose an injection-based control method for non-linear oscillator behaviors.
Main Methods:
- Utilized electrical measurements and the local active principle.
- Developed a thermodynamic compact model for vanadium oxide devices.
- Investigated non-linear oscillator control for frequency division, stochastic oscillations, and frequency locking.
Main Results:
- Demonstrated an injection-based control method for complex non-linear dynamics.
- Showcased a single device at the edge of chaos for frequency domain information extraction.
- Achieved performance comparable to a two-layer convolutional neural network for a specific task.
Conclusions:
- Bridged physical non-linearities, circuit dynamics, and computational theory.
- Facilitated a shift towards local active devices in neuromorphic computing.
- Advanced dynamic neuromorphic computing through a unified theoretical model.
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